MOS rear end processing

Details MOS rear end processing MOS rear end processing

1984-11-09

1986-05-06

Newsome, John H.

Coating processes

Electrical product produced

Condenser or capacitor

427 90, 427 93, 430271, B05D 512, G03C 726

Patent

active

045871388

ABSTRACT:
A process for the reduction of defect formation in conductive layers of semiconductor bodies during patterning, alloying and passivation. A film of low temperature spin-on-glass containing dye is formed on the conductive layer prior to patterning and any high temperature process greater than 200 degrees C. Hermetic passivation is achieved by depositing on the conductive layer a composite film consisting of a lower, tensile layer and an upper, compressive layer with the net force of the passivation film being tensile.

REFERENCES:
patent: 4102683 (1978-07-01), DiPiazza
patent: 4305974 (1981-12-01), Abe et al.
patent: 4357416 (1982-11-01), Fan
patent: 4476156 (1984-10-01), Brinker et al.
Lin et al, "IEDM International Electron Device Meeting, IEEE", 1982, Dec. 1982, pp. 399-402.

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