Process for simultaneously fabricating EEPROM cell and flash EPR

Details Process for simultaneously fabricating EEPROM cell and flash EPR Process for simultaneously fabricating EEPROM cell and flash EPR

1988-11-21

1990-09-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 44, 437 52, 437193, H01L 2170

Patent

active

049578774

ABSTRACT:
Improved processing which permits the simultaneous fabrication of block erasable flash EPROM cells and individually erasable EEPROM cells. A polysilicon finger extends from the floating gate of the EEPROM cell over a tunnel oxide region. Doped regions are formed under this finger by implanting dopants in alignment with the finger during the implantation of the source and drain regions for the cells and then driving the dopant under the finger. The arsenic dopant used to form the source and drain regions for the cells is used to form the doped regions along with the phosphorus dopant used for the source region of the flash EPROM cells.

REFERENCES:
patent: 4203158 (1980-05-01), Bentehkowksy
patent: 4517732 (1985-05-01), Oshikawa
patent: 4527259 (1985-07-01), Watanabe
patent: 4701776 (1987-10-01), Perlegos
patent: 4745083 (1988-05-01), Huie
patent: 4782424 (1988-10-01), Holler et al.
patent: 4804637 (1989-02-01), Smayling et al.
patent: 4822750 (1989-04-01), Perlegos

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