High performance submicron metal-oxide-semiconductor field effec

Details High performance submicron metal-oxide-semiconductor field effec High performance submicron metal-oxide-semiconductor field effec

1981-10-09

1983-05-17

Edlow, Martin H.

357 67, H01L 2978

Patent

active

043843018

ABSTRACT:
A novel metal-oxide-semiconductor (MOS) field effect transistor having enhanced oxide thickness at the edge of the gate electrode and having metal silicide regions in the gate electrode and source and drain areas. The enhanced oxide thickness improves interconnect-to-interconnect breakdown voltage in multilevel interconnect devices as well as minimizing gate overlap of source and drain. The metal silicide regions reduce series resistance and improve device speed and packing density.

REFERENCES:
patent: 4085498 (1978-04-01), Rideout
patent: 4141022 (1979-02-01), Sigg
patent: 4319260 (1982-03-01), Tasch

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