Semiconductor laser element suitable for production by a MO-CVD

Details Semiconductor laser element suitable for production by a MO-CVD Semiconductor laser element suitable for production by a MO-CVD

1985-02-08

1987-05-19

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, 357 17, H01S 319

Patent

active

046673326

ABSTRACT:
A semiconductor laser element includes a first cladding layer of first conductivity type provided on a semiconductor substrate of the first conductivity type; a current blocking layer of a second conductivity type provided on the first cladding layer having a stripe groove from which the first cladding layer and is exposed at the bottom thereof; a light guide layer of the first conductivity type provided covering the current blocking layer, the stripe groove, and the first cladding layer exposed from the groove; an active layer provided on the light guide layer curved in the neighborhood of the stripe groove, whose refractive index is larger than that of the light guide layer; and a second cladding layer of the second conductivity type provided on the active layer, whose refractive index is smaller than that of the active layer.

REFERENCES:
patent: 4480331 (1984-10-01), Thompson
"Visible GaAlAs V-Channeled Substrate Inner Stripe Laser with Stabilized Mode Using p-GaAs Substrate", S. Yamamoto et al, Applied Physics Letters, vol. 40, pp. 372 to 374.
"Single-Longitudinal-Mode cw Room-Temperature Ga.sub.1-x Al.sub.x As--GaAs Channel-Guide Lasers Grown by Metal Organic Chemical Vapour Deposition", by R. D. Dupuis et al, Applied Physics Letters, vol. 33, pp. 724 to 726.

Affiliated with

Also associated with

Rating

Semiconductor laser element suitable for production by a MO-CVD does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser element suitable for production by a MO-CVD , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser element suitable for production by a MO-CVD will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1568973