Substrate coupled floating gate memory cell

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

357 23, 357 41, 357 54, 357 59, 365185, H03K 500, H01L 2978, H01L 2702, G11C 1134

Patent

active

042740126

ABSTRACT:
Nonvolatile semiconductor electrically-alterable, floating-gate memory methods and devices which utilize substrate coupling for self-regulated, tunnel-current-shaping to provide improved device characteristics. The substrate coupling also facilitates the cell interconnection to other circuit elements.

REFERENCES:
patent: 4099196 (1978-07-01), Simko
patent: 4203158 (1980-05-01), Frohman-Bentchkowsky et al.
patent: 4209849 (1980-06-01), Schrenk

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