Charge-coupled device channel structure

Details Charge-coupled device channel structure Charge-coupled device channel structure

1986-10-09

1987-05-19

Edlow, Martin H.

357 30, H01L 2978

Patent

active

046672133

ABSTRACT:
A buried-channel charge-coupled device includes a substrate of semiconductor material of one conductivity type having therein and along a surface thereof a major channel region of the opposite conductivity type and at least one supplemental channel region of the opposite conductivity type. Conductive gates extend across the channel regions and are positioned therealong. The supplemental channel region is of a volume smaller than that of the major channel region and is completely within the major channel region. Also, the supplemental channel region is of a higher conductivity than the major channel region. The supplemental channel region serves to confine small electrical charges so that the small charges can be transferred along the charge-coupled device with good efficiency, particularly when the device is being operated at low temperatures, such as when it is part of an infrared image sensor.

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Mohsen, A. M., and Tompsett, M. F., "The Effects of Bulk Traps on the Performance of Bulk Channel Charge-Coupled Devices", IEEE Transactions on Electron Devices, vol. Ed-21, No. 11, Nov. 1974, pp. 701-711.
Chakravarti, S. N., and Das, P., "Multiple Buried Channel Charge-Coupled Device", Solid State Electronics, vol. 23, No. 7, Jul. 1980, pp. 747-753.
"Design and Performance of 64.times.128 Element PtSi Schottky-barrier Infrared Charge-Coupled Device (IRCCD) Focal Plane Array", W. F. Kosonocky et al., SPIE, vol. 344, Infrared Sensor Technology, 1982, pp. 66-77.

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