Process for production of an integrated circuit

Details Process for production of an integrated circuit Process for production of an integrated circuit

1989-09-07

1995-04-25

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437907, 437908, 437915, 148DIG90, 148DIG164, H01L 2120

Patent

active

054098572

ABSTRACT:
An integrated circuit is formed thereof a conductive wiring pattern. On the conductive wiring semiconductor layer is directly formed in a form of amorphous on the substrate. The amorphous semiconductor layer is annealed to form a polycrystalline structure while avoiding influence of annealing heat for the substrate. In the polycrystalline semiconductor layer is formed a semiconductor element, such as MOS transistor, MIS transistor, TFT and so forth. The semiconductor element is directly connected to the wiring pattern on the substrate.

REFERENCES:
patent: 4370175 (1983-01-01), Levatter
patent: 4389481 (1983-06-01), Poleshuk et al.
patent: 4565584 (1986-01-01), Tamura et al.
T. Sameshima, S Usui & M. Sekiya "XeCl Excimer Laser Annealing Used in the Fabrication of Poly-Si TFT's" IEEE Elect. Dev. Lett EdL-7 #5 p. 276 (1986).

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