Method of Manufacturing three dimensional integrated device and

Details Method of Manufacturing three dimensional integrated device and Method of Manufacturing three dimensional integrated device and

1993-07-21

1995-04-25

Fourson, George

Fishing, trapping, and vermin destroying

437 67, 437228, 437 40, 257120, 257 66, H01L 21265

Patent

active

054098521

ABSTRACT:
A set of three-dimensional structures and devices may be wired together to perform a wide variety of circuit functions such as SRAMs, DRAMs, ROMs and PLAs. Both N-Channel and P-Channel transistors can be made. The P-channel devices are fabricated conventionally in separate N-wells or, alteratively, they are constructed in a like manner to the array N-channel devices. N and P diffused wire can be electrically joined at polysilicon contacts.

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patent: 4255207 (1981-03-01), Nicolay et al.
patent: 4286279 (1981-08-01), Hutson
patent: 4717681 (1988-01-01), Curran
patent: 4788158 (1988-11-01), Chatterjee
patent: 4982266 (1991-01-01), Chatterjee

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