Method of manufacturing a high density semiconductor device

Details Method of manufacturing a high density semiconductor device Method of manufacturing a high density semiconductor device

1994-03-09

1995-04-25

Fourson, George

Fishing, trapping, and vermin destroying

437186, 437203, H01L 21265

Patent

active

054098505

ABSTRACT:
In a MOS type semiconductor device, a source region, a channel region and a drain region of a MOS type device are arranged on the same plane, while a gate electrode is also arranged on the same plane adjacent to the channel region. Another set of a source region, a channel region and a drain region may also be arranged on the same plane and the latter MOS device is arranged to the gate electrode. This type of device may be constructed as a CMOS type device.
In another type of semiconductor device, the above-mentioned type plane arrangement of the source, channel and drain regions are layered via an insulator layer, while a gate electrode is provided vertically so as to be adjacent to the two channel regions.

REFERENCES:
patent: 4768076 (1988-08-01), Aoki et al.
patent: 4980308 (1990-12-01), Hayashi et al.
patent: 5096845 (1992-03-01), Inoue
H. Hieda et al., "New Effects of Trench Isolated Transistor Using Side-Wall Gates", IEDM 87, pp. 736-739, 1987.
T. Tanaka et al., "Analysis of P.sup.+ Poly Si Double-Gate Thin-Film SOI Mosfets", IEDM91, pp. 683-686, 1991.

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