Method for forming composite trench-fin capacitors for DRAMS

Details Method for forming composite trench-fin capacitors for DRAMS Method for forming composite trench-fin capacitors for DRAMS

1996-02-14

1997-11-18

Tsai, Jey

Fishing, trapping, and vermin destroying

437 60, 437919, 437203, H01L 218242

Patent

active

056887094

ABSTRACT:
A semiconductor memory device capacitor is disclosed which has a trench capacitor portion provided in a semiconductor substrate and a fin capacitor portion provided above the substrate. The trench capacitor portion includes (i) a trench extending from an upper surface of the semiconductor substrate downwardly into the substrate, and (ii) an electrically conductive trench electrode provided interior to the trench. And the fin capacitor portion includes (i) a fin electrode having a body portion and two or more electrically conductive fins extending outwardly from the body portion, (ii) a fin dielectric layer conformally coating the two or more electrically conductive fins, and (iii) a cell electrode surrounding and in intimate contact with the two or more electrically conductive fins.

REFERENCES:
patent: Re33261 (1990-07-01), Baglee et al.
patent: 5146425 (1992-09-01), Kang et al.
patent: 5217918 (1993-06-01), Kim et al.
patent: 5234856 (1993-08-01), Gonzalez
patent: 5455192 (1995-10-01), Jeon
"3-Dimensional Stacked Capacitor Cell for 16M and 64M Drams", by T. Ema, S. Kawanago, T. Nishi, S. Yoshida, H. Nishibe, T. Yabu, Y. Kodama, T. Nakano and M. Taguchi; Technical Digest, CH2528-8/88/0000-0592, 1988 IEEE, pp. 592-595.
"A Spread Stacked Capacitor (SCC) Cell for 64Mbit Drams", by S.Inoue, K. Hieda, A. Nitayama, F. Horiguchi and F. Masouka; Technical Digest, CH2637-7/89/000-0031, 1989 IEEE, pp. 318-334.
"Advanced Cell Structures for Dynamic RAMs", by Nicky C.C. Lu, IEEE Circuits and Devices Magazine, Jan. 1989, pp. 27-36.

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