Method of forming transverse diffusion barrier interconnect stru

Details Method of forming transverse diffusion barrier interconnect stru Method of forming transverse diffusion barrier interconnect stru

1995-04-26

1996-01-30

Fourson, George

Fishing, trapping, and vermin destroying

437190, 437195, H01L 2128

Patent

active

054880130

ABSTRACT:
An interconnect line is formed of a metallization layer and a plurality of transverse diffusion barriers spaced within said metallization layer. The transverse diffusion barriers separate the length of metallization of the line into discrete sections, such that each section is only 20-50 microns in length. The diffusion barriers reduce electromigration and metal creep within the metal line, each of which can cause failure of the line. The method further provides such an interconnect line formed within an insulator layer, for use in multi-level interconnect structures.

REFERENCES:
patent: 4808552 (1989-02-01), Anderson
patent: 4931137 (1990-06-01), Sibuet
patent: 5169802 (1992-12-01), Yeh
W. Buthrie et al, IBM Tech. Discl. Bull., 32 (10B), pp. 114-115 1990.

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