Method of fabricating sidewall charge-coupled device with trench

Details Method of fabricating sidewall charge-coupled device with trench Method of fabricating sidewall charge-coupled device with trench

1994-05-10

1996-01-30

Fourson, George

Fishing, trapping, and vermin destroying

437 50, 437 67, H01L 2170, H01L 27148

Patent

active

054880106

ABSTRACT:
A charge-coupled imaging device comprising a plurality of trenches in the surface of the silicon substrate which separate adjacent columns in the CCD device. A plurality of surface electrodes are provided on the surface of the charge-coupled device extending perpendicular to the isolation trenches, which electrodes provide for clocked transfer of charges between adjacent cells within each column of the charge-coupled device. The CCD cells are formed on the silicon ridges delineated between the isolation trenches, and this structure maximizes the three dimensional surface area of the CCD cells and facilitates transport of charges along the CCD cell sidewalls. The sidewall CCD with trench isolation provides a CCD cell layout size the same as that of a conventional two dimensional CCD cell, but with an increased charge capacity per CCD cell because of the larger three dimensional areas of the CCD cells. The increase in charge capacity means a larger signal-to-noise ratio and consequently a larger dynamic range. In one embodiment, a plurality of shallow electrodes are defined under the surface electrodes to increase the charge carrying surface area and provide better gate control.

REFERENCES:
patent: 4878102 (1989-10-01), Bakker et al.
patent: 5083173 (1992-01-01), Yamada et al.
patent: 5114865 (1992-05-01), Kimura
patent: 5156985 (1992-10-01), Yamada et al.
Semicon NEWS, dated Jun. 1989, pp. 62-67.

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