Method for producing a bipolar transistor having a reduced base

Details Method for producing a bipolar transistor having a reduced base Method for producing a bipolar transistor having a reduced base

1985-01-31

1986-05-27

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29576B, 148 15, 148187, 148DIG10, 148DIG140, H01L 21265, H01L 2122

Patent

active

045906661

ABSTRACT:
A method of producing a bipolar transistor which includes forming a base region, forming a high-melting-point metal layer of a base electrode on the base region, forming a first insulating layer on the metal layer, and selectively etching the first insulating layer and the metal layer to form an opening. The method further includes forming a second insulating layer on the sides of the first insulating layer and the metal layer within the opening, the second insulating layer defining an emitter-providing region. Impurities are introduced into the base region by using the second insulating layer as a mask to form an emitter region. An emitter electrode and the base electrode are arranged in a similar multilayer structure.

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