Lateral bipolar transistor

Details Lateral bipolar transistor Lateral bipolar transistor

1976-05-21

1978-08-22

Larkins, William D.

357 4, 357 20, 357 43, 357 49, 357 53, 357 89, 357 91, H01L 2712, H01L 2906, H01L 2972

Patent

active

041092724

ABSTRACT:
A lateral bipolar transistor has a silicon film which is epitaxially deposited on an electrical insulating substrate. The silicon film is doped with impurities of a first conductivity type such that a portion of the film may be utilized as a base zone. Within the base zone an emitter zone and a collector zone are formed of the second conductivity type. A highly doped zone of the second conductivity type is produced by deep implantation at a position which is contiguous and below the base zone, below the emitter and collector zones, and at a boundary between the silicon film and the electrical insulating substrate. An insulating zone over the film and a conductive layer over the base zone are also provided. The conductive film over the base zone together with the highly doped zone below and contiguous with the base minimize surface recombination and increase device gain.

REFERENCES:
patent: T861057 (1969-04-01), Lin
patent: 3622812 (1971-11-01), Crawford
patent: 3660732 (1972-05-01), Allison
patent: 3846821 (1974-11-01), Nagata et al.
patent: 3859716 (1975-01-01), Tihanyi
patent: 3943555 (1976-03-01), Mueller et al.
patent: 3997908 (1976-12-01), Schloetterer et al.
patent: 4005451 (1977-01-01), Martinelli et al.
Heiman et al., Solid-State Electronics, (Pergamon Press, 1968), vol. 11, 1968, pp. 411-412.
Schroder et al., Appl. Phys. Lett., vol. 22, No. 9, 1 May 1973, pp. 455-457.

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