Method of chromeless phase shift mask fabrication suitable for a

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430312, 430313, 430314, G03F 900

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active

054879620

ABSTRACT:
A method for forming chromeless phase shifting photomasks is provided. The photomasks include a transparent substrate and raised phase shifters formed with a vertical edge and a tapered edge. During a lithographic process using the photomask, the vertical edges of the phase shifters form nulls on a photoresist covered wafer. The tapered edge prevents the formation of undesirable stringers on the wafer. The method of the invention includes the steps of: forming an opaque etch mask including a pattern of opaque features on a transparent substrate; forming a layer of resist over one sidewall of each opaque feature; and then etching the photoresist with one etching species and the substrate with another etching species to form chromeless phase shifters each having a vertical edge and a tapered edge.

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Lin, Burn J., "Phase Shifting and Other Challenges in Optical Mask Technology", IBM-EF-15 (Sep. 26, 1990).

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