Method for providing in-situ non-destructive monitoring of semic

Details Method for providing in-situ non-destructive monitoring of semic Method for providing in-situ non-destructive monitoring of semic

1981-07-27

1983-04-26

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

148 15, 310313R, 364821, H01L 21268, H01L 21263, G06G 7195

Patent

active

043808646

ABSTRACT:
In-situ, non-destructive monitoring of semiconductors during laser annealing process is realized by a method the steps of which include: positioning a surface acoustic wave device adjacent to the semiconductor being annealed and in intercepting relationship with the annealing radiation, the surface acoustic wave device substrate being transparent to the annealing radiation; affixing an electrical contact to the top surface of the semiconductor; applying an r.f. input to the surface acoustic wave device; and measuring the transverse acousto- electrical voltage on the electrical contact. The surface acoustic wave propagation surface of the surface acoustic wave device is in close proximity to the bottom surface of the semiconductor and interaction of the electric field that accompanies the propagating surface acoustic wave with the charge carriers of the semiconductor produces the transverse acoustoelectric voltage. The transverse acoustoelectric voltage is thus a function of the semiconductor conductivity.

REFERENCES:
patent: 4055758 (1977-10-01), Stern et al.
patent: 4070652 (1978-01-01), Heng et al.
patent: 4101965 (1978-07-01), Ingebrigtsen et al.
patent: 4124828 (1978-11-01), Bert
patent: 4233573 (1980-11-01), Grudkowski
patent: 4259726 (1981-03-01), Joly

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