Method of making a field effect transistor with a T shaped polys

Details Method of making a field effect transistor with a T shaped polys Method of making a field effect transistor with a T shaped polys

1992-10-30

1997-07-22

Fourson, George

Fishing, trapping, and vermin destroying

4374165, 437 44, H01L 218234

Patent

active

056503423

ABSTRACT:
A field effect transistor comprises a semiconductor substrate having a main surface and a predetermined impurity concentration of a first conductivity type, impurity layers of a second conductivity type formed spaced apart at the main surface of the semiconductor substrate, and a shaped conductive layer serving as a gate electrode. The impurity layers constitute source.drain regions, and a region between the impurity layers defines a channel region in the main surface. The shaped conductive layer is formed on the channel region with an insulating film therebetween. The shaped conductive layer has an upper portion and a lower portion wherein the upper portion is longer than the lower portion and the length of the lower portion adjacent the insulating film is substantially equal to or shorter than the length of the channel region at the main surface. Additionally, the upper and lower portions of the shaped conductive layer are formed of the same base composition.

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