Power MISFET

Details Power MISFET Power MISFET

1987-01-06

1991-01-22

Hille, Rolf

357 16, 357 90, H01L 2980, H01L 29161

Patent

active

049874624

ABSTRACT:
Preferred embodiments include a microwave power MISFET (30) with a thin GaAS channel (54) bounded by an undoped Al.sub.x Ga.sub.1-x As gate insulator (44) and a doped Al.sub.y Ga.sub.1-y As barrier (40). Under forward bias the channel (54) forms a quantum well which accumulates electrons and thereby increase maximum current and power handling without degrading breakdown voltage of the heterostructure MISFET An additional active layer (36) can be included on the other side of the barrier (40) to further increase power handling. Other embodiments include use of a strained layer In.sub.z Ga.sub.1-z As channel.

REFERENCES:
patent: 4194935 (1980-03-01), Dingle et al.
patent: 4558337 (1985-12-01), Saunier et al.
patent: 4652896 (1987-03-01), Das et al.
S. Judaprawira et al., "Mod.-Doped MBE GaAs
-Al.sub.x Ga.sub.1 -.sub.x As MESFETs, " IEEE Elec. Dev. Lett., vol. EDL-2, #1, Jan. 1981, pp. 14, 15.
J. Barnard et al., "Double Heterostructure GA.sub.0.47 In.sub.0.53 As MESFETs with Submicron Gates", IEEE Electron Device Letters, vol. EDL-1, No. 9, Sep. 1980.

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