Chemical apparatus and process disinfecting – deodorizing – preser – Chemical reactor – With means applying electromagnetic wave energy or...
Patent
1993-07-06
1996-01-30
Walsh, Donald P.
Chemical apparatus and process disinfecting, deodorizing, preser
Chemical reactor
With means applying electromagnetic wave energy or...
42218604, 333 99PL, 333242, 31511121, 31511171, 219691, H05H 146
Patent
active
054878756
DESCRIPTION:
BRIEF SUMMARY
FIELD OF THE INVENTION
The present invention relates to a microwave introducing device provided with an endless circular waveguide and to a plasma treating apparatus provided with said microwave introducing device. More particularly, the present invention relates to a microwave introducing device capable of uniformly and efficiently supplying a microwave from the entire circumferential wall of a vacuum vessel into which a microwave is to be introduced toward the center of said vacuum vessel and to a plasma treating apparatus provided with said microwave introducing device.
BACKGROUND OF THE INVENTION
There are known a number of plasma treating apparatus in which a microwave is used as the excitation source for generating plasma. Specific examples of such plasma apparatus are CVD apparatus, etching apparatus, and the like.
The formation of a deposited film using a so-called microwave plasma CVD apparatus is conducted, for example, in such a manner as will be described in the following. That is, a film-forming raw material gas is introduced into the film-forming chamber of the microwave plasma CVD apparatus, and at the same time, a microwave energy is introduced thereinto, whereby the film-forming raw material gas is excited and decomposed with the action of the microwave energy to produce plasma, resulting in causing the formation of a deposited film on a substrate placed in the film-forming chamber.
The etching treatment of a substrate to be treated using a so-called microwave plasma etching apparatus is conducted, for example, in such a manner as will be described in the following. That is, an etching raw material gas is introduced into the treating chamber of the microwave plasma etching apparatus, and at the same time, a microwave energy is introduced thereinto, whereby the etching raw material gas is excited and decomposed with the action of the microwave energy to produce plasma, resulting in etching the surface of said substrate with the plasma in the treating chamber.
In each of these microwave plasma treating apparatus, a microwave is used as the excitation source for the raw material gas used, and because of this, it is possible to chain-like accelerate and excite electrons generated as a result of ionizing the molecules of the raw material gas by an electric field with an extremely large frequency. In this respect, the microwave plasma treating apparatus has advantages such that a high excitation efficiency and a high decomposition efficiency can be attained as for the raw material gas, plasma with a high density can be relatively easily produced, and the plasma treatment of an object can be conducted at a high speed. In addition, there are further advantages in that the microwave plasma treating apparatus can be designed to be of a non-electrode discharging type because the microwave used has a property of transmitting through a dielectric material and in that case, the plasma treatment of an object can be conducted in a highly clean atmosphere.
The introduction of a microwave into these microwave plasma treating apparatus is usually conducted by one of the following three manners. That is, (i) a manner of introducing a microwave transmitted through a waveguide from a microwave power source into the plasma treating chamber through a coaxial antenna, (ii) a manner of introducing a microwave transmitted through a waveguide from a microwave power source into the plasma treating chamber through a dielectric window, and (iii) a manner of introducing a microwave transmitted through a waveguide from a microwave power source into the plasma treating chamber through one or more slots (that is, one or more apertures) disposed at said waveguide. There are known a number of plasma treating apparatus for subjecting an object to plasma treatment, in which these microwave introducing manners are employed.
As an example of the apparatus in which the above manner (i) is employed, there can be mentioned a plasma treating apparatus of the constitution in which a microwave is introduced into a plasma generation
REFERENCES:
patent: 3585540 (1971-06-01), Schuttloffel et al.
patent: 4536767 (1985-08-01), Rembold et al.
patent: 4825175 (1989-04-01), Tsuda et al.
patent: 4825219 (1989-04-01), Ajioka
patent: 5003687 (1991-04-01), Lapp et al.
patent: 5049895 (1991-09-01), Ito et al.
patent: 5184046 (1993-02-01), Campbell
patent: 5325020 (1994-06-01), Campbell et al.
patent: 5389154 (1995-02-01), Hiroshi et al.
patent: 5587009 (1971-06-01), Kibler
Canon Kabushiki Kaisha
Jenkins Daniel
Walsh Donald P.
LandOfFree
Microwave introducing device provided with an endless circular w does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Microwave introducing device provided with an endless circular w, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microwave introducing device provided with an endless circular w will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-155668