Semiconductor integrated circuit device having an improved commo

Details Semiconductor integrated circuit device having an improved commo Semiconductor integrated circuit device having an improved commo

1989-04-28

1991-01-22

Hudspeth, David

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307455, 307467, 357 45, H03K 19177

Patent

active

049873261

ABSTRACT:
In a gate array integrated circuit including a plurality of logic gate circuits having a wired-OR form, or the like, a first common combined wiring is provided for connecting the output side in such a manner that the output terminal of each logic gate circuit and a branch node corresponding thereto are in the proximity of one another. A terminal resistor is interposed between a first end of the first common combined wiring and a power source voltage or ground potential of the circuit, and the second end of the first common combined wiring is coupled to a second common combined wiring connecting the input terminals of the logic gate circuits on the input side.

REFERENCES:
patent: 4207556 (1980-06-01), Sugiyama et al.
patent: 4255672 (1981-03-01), Ohno et al.
patent: 4564773 (1986-01-01), Tanizawa et al.
patent: 4577276 (1986-03-01), Dunlop et al.
patent: 4748488 (1988-05-01), Suzuki et al.
patent: 4751406 (1988-06-01), Wilson
patent: 4804861 (1989-02-01), Hollstein et al.
patent: 4849659 (1989-07-01), West

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