Semiconductor apparatus and production method for the same

Details Semiconductor apparatus and production method for the same Semiconductor apparatus and production method for the same

1996-06-26

1997-10-14

Niebling, John

Fishing, trapping, and vermin destroying

437 40SW, 437195, H01L 21265

Patent

active

056772491

ABSTRACT:
A gate wire is formed so as to extend from an active area to a separation, and an impurity diffused area is formed on each side of the gate electrode located on the active area. A contact member for connecting the gate wire to a first layer aluminum interconnection formed in an upper layer of the gate wire is in contact with the gate wire at a portion located on the active area. The utilization ratio of the active area is thus improved, and hence, the width of the separation can be minimized. In addition, by eliminating a mask alignment margin from the gate wire and suppressing the width of the gate wire not to exceed the width of the contact member, the occupied area of a semiconductor apparatus can be reduced.

REFERENCES:
patent: 4619038 (1986-10-01), Pintchovski
patent: 5366930 (1994-11-01), Kim
patent: 5393688 (1995-02-01), Motonami et al.

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