Method of making wide bandgap semiconductor devices

Fishing – trapping – and vermin destroying

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437100, 437231, H01L 21302, H01L 21304, H01L 21306, H01L 2176

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056772300

ABSTRACT:
A method of planarizing wide bandgap semiconductor devices selected from a group including SiC, GaN and diamond having a mesa defined thereon by a trench with a depth of 1 to 2 micrometers and a width of 2 to 10 micrometers. A layer of dielectric material is deposited on the substrate overlying and surrounding the mesa, to a height approximately equal to the height of the mesa and the dielectric material is etched from atop the mesa and from a surrounding area. Layers of spin on glass are deposited to fill the surrounding area and etched to achieve a planar surface including the mesa and the layer of dielectric material.

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