Process for forming a semiconductor memory cell

Details Process for forming a semiconductor memory cell Process for forming a semiconductor memory cell

1995-04-12

1997-10-14

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 47, 437 52, 437919, H01L 2170

Patent

active

056772254

ABSTRACT:
In the present invention, a cylindrical or a cup shaped capacitor electrodes is formed within a trench. The process may include the steps of: (a) forming a trench in a semiconductor substrate, filling a first material layer which contains impurity material into the trench, carrying out a heat treatment to diffuse impurities of the first material layer so as to form an impurity diffusion region in the substrate surrounding the trench, and removing the first material layer; (b) depositing first and second insulating layers to a certain thickness on the semiconductor substrate, and carrying out an anisotropic etching of the first and second insulating layers so as to form side walls within the trench; (c) depositing a first conductive layer and etching back the first conductive layer so as to form a first conductive layer pole within the trench, and removing the side walls of the first and second insulating layers by carrying out an isotropic etching so as to form a plate electrode; (d) forming a capacitor dielectric layer on the plate electrode, and forming a capacitor node electrode by depositing a second conductive layer and patterning the second conductive layer.

REFERENCES:
patent: 5126280 (1992-06-01), Chan et al.
patent: 5150276 (1992-09-01), Gonzalez

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