Method of fabricating a nonvolatile semiconductor memory device

Details Method of fabricating a nonvolatile semiconductor memory device Method of fabricating a nonvolatile semiconductor memory device

1994-05-10

1997-10-14

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 45, 437149, H01L 218247

Patent

active

056772157

ABSTRACT:
A simple and easy method for fabricating an EEPROM cell is disclosed. An EEPROM cell fabricated by the method includes: a first active region with a second conductivity-type, lightly-doped density impurity formed in a first conductivity-type semiconductor substrate; a second active region with a second conductivity-type, heavily-doped density impurity formed in one side of the first active region; a third active region with the second conductivity-type, heavily-doped density impurity formed in the other side of the first active region; a fourth active region with a first conductivity-type, heavily-doped density impurity formed so as to surround the third active region; a floating gate on top of a first insulating layer overlying the first active region; and a control gate on top of a second insulating layer overlying the floating gate. The EEPROM cell thereby fabricated is improved in operational characteristics such as an erasing speed and a programming speed. The EEPROM cell is fabricated very small size to be highly integrated.

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