Method for manufacturing a thin film transistor

Details Method for manufacturing a thin film transistor Method for manufacturing a thin film transistor

1996-04-01

1997-10-14

Trinh, Michael

Fishing, trapping, and vermin destroying

437 41TFI, 437937, H01L 2186

Patent

active

056772114

ABSTRACT:
In a method for manufacturing a thin film transistor, an upper portion of a channel region of an a--Si active layer is selectively etched using the source electrode and the drain electrode as a mask, so as to form a recess in the upper portion of the channel region of the active layer. Hydrogen plasma is irradiated to an exposed surface including a surface of the active layer, and succeedingly, an amorphous silicon film is deposited on the exposed surface including the surface of the active layer, and then patterned so as to form a light block film which also acts a protection layer.

REFERENCES:
patent: 4704783 (1987-11-01), Possin et al.
patent: 4797108 (1989-01-01), Crowther
patent: 4823180 (1989-04-01), Wieder et al.
patent: 5264710 (1993-11-01), Yamagishi et al.
patent: 5281546 (1994-01-01), Possin et al.

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