Semi-conductor integrated circuit

Details Semi-conductor integrated circuit Semi-conductor integrated circuit

1976-02-03

1977-12-06

Wojciechowicz, Edward J.

357 23, 357 40, 357 41, 357 42, 357 52, H01L 2702, H01L 2934, H01L 2978

Patent

active

040620395

ABSTRACT:
An improved semi-conductor integrated circuit wherein the likelihood of permanent breakdown of reverse junctions in the integrated circuitry in response to unexpected high voltages applied thereto is substantially reduced. The semi-conductor integrated circuitry includes at least two field-effect transistors and defines a circuit having at least one output terminal. At least one of the field-effect transistors includes a drain output terminal, and a resistance for reducing the secondary breakdown at the drain output terminal of the reverse junction between the drain output terminal and the semi-conductor integrated circuit substrate, said resistance being disposed intermediate said drain output terminal and said circuit output terminal.

REFERENCES:
patent: 3673428 (1972-06-01), Athanas
IBM - Tech. Bul. - vol. 15, No. 2, July 1972, W. Baechtold.

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