Stacked MOS device with means to prevent substrate floating

Details Stacked MOS device with means to prevent substrate floating Stacked MOS device with means to prevent substrate floating

1984-04-03

1986-02-18

Edlow, Martin H.

357 231, 357 237, 357 2312, 357 4, 357 55, 357 59, H01L 2702

Patent

active

045716099

ABSTRACT:
An MOS type semiconductor device having a semiconductor substrate, an insulating layer formed in or on said semiconductor substrate, and an MOS transistor formed on said insulating layer, characterized in that said insulating layer is formed at a region below said MOS transistor excluding at least part of the region below a channel region of said MOS transistor.

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