Isolation technology using liquid phase deposition

Details Isolation technology using liquid phase deposition Isolation technology using liquid phase deposition

1994-03-21

1995-09-26

Fourson, George

Fishing, trapping, and vermin destroying

H01L 2176

Patent

active

054533953

ABSTRACT:
A method of forming an isolation structure on a silicon substrate using liquid phase deposition which is capable of selectively depositing oxide only in trenches of the substrate, to grow recessed field oxides of same height, and leave a flat surface of the substrate. The liquid phase deposition is performed using saturated hydrofluosilicic acid as a reactant.

REFERENCES:
patent: 5256593 (1993-10-01), Iwai

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