Process for preparing semiconductor substrate by bringing first

Details Process for preparing semiconductor substrate by bringing first Process for preparing semiconductor substrate by bringing first

1993-01-28

1995-09-26

Fourson, George

Fishing, trapping, and vermin destroying

437974, 148DIG12, H01L 2176

Patent

active

054533945

ABSTRACT:
A process for preparing a semiconductor substrate comprises bringing a first substrate provided with at least one of boron and phosphorus on the surface of an insulating layer formed on the surface of the substrate in contact with a second substrate, and integrating both of the substrates by a heat treatment.

REFERENCES:
patent: 3909332 (1975-09-01), Yerman
patent: 4791074 (1988-12-01), Tsunashima et al.
patent: 5094697 (1992-03-01), Takabayashi et al.
patent: 5213986 (1993-05-01), Pinker et al.
"A New Thinning Method for Obtaining Less than 100-nm-Thick Si Film on Wafer Bonding" by Kazuo Imai; Japanese Journal Of Applied Physics; vol. 30 No. 6 Jun. 1991. pp. 1154-1157.
"Single-Crystal Silicon On Non-Single-Crystal Insulators" by G. W. Cullen; Extended Abstracts; vol. 91-2, Oct. 13-17, 1991; pp. 674-749 Fall Meeting Of The Electrochemist Society.

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