Fabrication method of semiconductor device with neighboring n- a

Details Fabrication method of semiconductor device with neighboring n- a Fabrication method of semiconductor device with neighboring n- a

1994-12-12

1995-09-26

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 31, 437 75, 437953, 437 28, 437 34, H01L 21266, H01L 21761

Patent

active

054533872

ABSTRACT:
A fabrication method of a semiconductor device that can form n- and p-type buried regions separately in a semiconductor substrate of a first conductivity type through a single lithography process. A first impurity of a second conductivity type is doped into the substrate through a first window to produce a first doped region of the second conductivity type. A second impurity of the second conductivity type is doped into the substrate through a second window larger than the first window to produce a second doped region of the second conductivity type. The second doped region is placed under the unoverlapped part of the first and second windows and lower in impurity concentration than the first doped region. A third impurity of the first conductivity type is doped into the substrate through its surface area containing the second window to produce a third doped region of the first conductivity type. The third doped region is lower in impurity concentration than the first doped region. The second doped region with the second and third impurities acts as a separation region for electrically separating the first and third doped regions.

REFERENCES:
patent: 4346512 (1982-08-01), Liang et al.
patent: 5023191 (1991-06-01), Sakurai
patent: 5023195 (1991-06-01), Sekikawa et al.
patent: 5397714 (1995-03-01), De Jong et al.

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