Semiconductor integrated circuit having a stand-by current reduc

Static information storage and retrieval – Addressing – Particular decoder or driver circuit

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307571, G11C 800

Patent

active

052746011

ABSTRACT:
A device parameter of a switching transistor is set in such a way that a leakage current of the switching transistor making up a power source switch which is turned off in a stand-by state is smaller than the sum total of subthreshold currents of P-channel or N-channel MOS transistors in an off state of a plurality of CMOS circuits. Therefore, the currents which flow through the plurality of CMOS circuits in the stand-by state are not determined by the subthreshold current but are determined by a small leakage current of the switching transistor. As a result, even when the CMOS circuit is shrunken and the subthreshold current increases, it is possible to reduce the current consumption in the stand-by state.

REFERENCES:
patent: 4953133 (1990-08-01), Kashimura
patent: 5200921 (1993-04-01), Okijima

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