Semiconductor strain detector

Measuring and testing – Specimen stress or strain – or testing by stress or strain... – Specified electrical sensor or system

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G01L 100

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active

049861310

ABSTRACT:
In a semiconductor strain detector, the temperature characteristic of the output of a zero-point temperature compensating circuit is added to the zero-point temperature characteristic of the output of a bridge circuit composed of strain gauges, to perform a zero-point temperature compensation of the final output. Further, two kinds of diffusion resistors having different surface impurity densities are used in each amplifying circuit to perform a sensitivity-temperature compensation in which a temperature coefficient of sensitivity is considered up to the second-order term.

REFERENCES:
patent: 4333349 (1982-06-01), Mallon et al.
patent: 4404539 (1983-09-01), Yamada et al.
patent: 4576052 (1986-03-01), Sugiyama
patent: 4715003 (1987-12-01), Keller et al.
patent: 4813272 (1989-03-01), Miyazaki et al.

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