Semiconductor device having an improved bonding pad

Details Semiconductor device having an improved bonding pad Semiconductor device having an improved bonding pad

1990-04-24

1991-07-30

James, Andrew J.

357 59, 357 68, 357 54, 357 67, H01L 2348, H01L 2904, H01L 2944

Patent

active

050363832

ABSTRACT:
A polysilicon film is formed on an Si substrate through an insulating oxide film, and a composite film constituted by oxide and nitride films is formed on the polysilicon film. A polycide layer is formed on the composite film, and a metal electrode layer serving as a bonding pad is formed on the polycide layer through a barrier metal layer.

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S. Mori et al., "Poly-Oxide/Nitride/Oxide Structures for Highly Reliable EPROM Cells" 1984 Symposium on VLSI Technology, Sep. 10-12, 1984, pp. 1-3.

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