Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1992-07-10
1993-12-28
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257294, 257435, 257440, 257443, H01L 2714
Patent
active
052742504
ABSTRACT:
Disclosed is a color image sensor of the type that reads color images with the aid of filters that absorb light of different colors (e.g. red, green and blue) and that are provided over arrays of light-receiving devices formed in a plurality of rows on a common substrate. The color image sensor includes a substrate, light-receiving devices formed on the substrate, thin-film transistors that are connected to the light-receiving devices and that are formed on the substrate, an insulating layer that covers the thin-film transistors and the light-receiving devices, a color filter formed on the insulating layer in such a position that it covers the light-receiving devices, and a light-shielding layer formed on the insulating layer in such a position that it covers the thin-film transistors.
REFERENCES:
patent: 3969751 (1976-07-01), Drukaroff et al.
patent: 4412236 (1983-10-01), Sasano et al.
patent: 4553153 (1985-11-01), McColgin et al.
Horii et al., "A 490.times.404 Element Imager for a Single-Chip Color Camera," Digest of Technical Papers, 1985 IEEE International Solid-State Circuits Conference, Feb. 1985, pp. 96-97.
Ito Hisao
Miyake Hiroyuki
Fuji 'Xerox Co., Ltd.
Mintel William
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