Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1993-12-14

1995-04-11

Lee, John D.

Coherent light generators

Particular active media

Semiconductor

372 44, H01S 319

Patent

active

054065747

ABSTRACT:
A semiconductor laser device includes a substrate, a first cladding layer formed on the substrate, an active layer formed on the first cladding layer, and a second cladding layer formed on the active layer having a conductivity type different from that of the first cladding layer, wherein at least one of the first and second cladding layers has a multiquantum barrier structure. The width of the first quantum barrier of the multiquantum barrier structure relative to the side of the active layer is 24 to 100 nm, the width of the second quantum barrier of the multiquantum barrier structure relative to the side of the active layer is 5 to 20 nm, and the multiquantum barrier structure is constituted by alternately stacking first thin layers consisting of In.sub.z (Ga.sub.1-x Al.sub.x).sub.1-z P (x is 0.7 to 1.0 and z is 0 to 1.0) and second thin layers consisting of In.sub.z (Ga.sub.1-y Al.sub.y).sub.1-z P (y is 0 to 0.3 and z is 0 to 1.0).

REFERENCES:
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patent: 4961197 (1990-10-01), Tanaka et al.
patent: 5105240 (1992-04-01), Omura
patent: 5132981 (1992-07-01), Uomi et al.
patent: 5251224 (1993-10-01), Irikawa et al.
Takagi et al, "Design and Photoluminescence Study . . . ", IEEE J. Quantum Electronics, vol. 27, No. 6, Jun. 1991, pp. 1511-1519.
Takagi et al., "Modified Multiquantum Barrier For . . . ", Electronics Letters, vol. 27, No. 12, Jun. 6, 1991, pp. 1081-1082.

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