Method of forming contact to thin film semiconductor device

Details Method of forming contact to thin film semiconductor device Method of forming contact to thin film semiconductor device

1983-05-09

1986-02-18

Weisstuch, Aaron

Metal working

Method of mechanical manufacture

Assembling or joining

29572, 29589, 29590, 29591, 136256, 136249, 136258, 357 30, 357 65, 427 431, 427 531, H01L 2128, H01L 21326, H01L 3118

Patent

active

045703329

ABSTRACT:
A method for making an electrode on a desired region of a thin film semiconductor layer having a junction therein and deposited on a conductive surface comprising the steps of applying an electrical pulse signal across the semiconductor layer at the desired region to lower the resistivity of the region and then forming an electrode film on the desired region of said semiconductor layer opposite said conductive surface, is disclosed. In one alternative embodiment, an electrode film is formed on the thin film semiconductor layer and thereafter an electrical pulse signal is applied across the semiconductor layer at the desired region to lower the resistivity of the region.

REFERENCES:
patent: 3902920 (1975-09-01), Jordan et al.
patent: 4042418 (1977-08-01), Biter
patent: 4166918 (1979-09-01), Nostrand et al.
patent: 4428110 (1984-01-01), Kim
patent: 4443651 (1984-04-01), Swartz

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