Method of producing a semiconductor device with total dielectric

Details Method of producing a semiconductor device with total dielectric Method of producing a semiconductor device with total dielectric

1988-10-18

1991-07-30

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 31, 437 67, 437 84, 437228, 437235, H01L 2176

Patent

active

050360213

ABSTRACT:
A method of producing a semiconductor device comprises the steps of preparing a stacked structure having an n.sup.- -type semiconductor substrate, an n.sup.+ -type diffusion layer formed on the n.sup.- -type semiconductor substrate and an oxide layer formed on the n.sup.+ -type diffusion layer, adhering a base substrate on the oxide layer, removing the n.sup.- -type semiconductor substrate in its entirety by an etching, forming an n.sup.- -type semiconductor layer on the n.sup.+ -type diffusion layer to a predetermined thickness by an epitaxial growth, and forming at least an element in the n.sup.- -type semiconductor layer which constitutes an active layer.

REFERENCES:
patent: 3343255 (1967-09-01), Donovan
patent: 3391023 (1968-07-01), Frescura
patent: 3445925 (1969-05-01), Lesk
patent: 3462322 (1969-08-01), Hennings et al.
patent: 3997381 (1976-12-01), Wanlass
patent: 4050979 (1977-09-01), Smeltzer et al.
patent: 4118857 (1978-10-01), Wong
patent: 4177094 (1979-12-01), Kroon
patent: 4601779 (1986-07-01), Abernathey et al.
patent: 4649627 (1987-03-01), Abernathey et al.
E. D. Palik et al., Study of Etch Stop Mechanism in Silicon, J. of Electrochem. Society, vol. 129, No. 9, pp. 2051-2058.

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