Process for fabricating an EEPROM cell having a tunnel opening w

Fishing – trapping – and vermin destroying

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437 48, 437 52, 437 69, 437 70, 437228, 257315, 257321, 257314, H01L 21302, H01L 2138, H01L 27115

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active

052739236

ABSTRACT:
An EEPROM cell (10) has a tunnel opening (28) which overlaps both an active region (12) and field isolation regions (14). A tunnel area (30), which is that portion of the cell in which electrons tunnel through a tunnel dielectric (32) to charge or discharge a floating gate (22) during device operation, is defined as the overlapped portion of the tunnel opening (28) and the active region (12). By having the tunnel opening (28) larger than the tunnel area (30), etch processes used to pattern the opening in a gate dielectric (26) are more easily controlled and the active region area beneath the floating gate is reduced. The EEPROM cell (10) has a tunnel area which is limited in size by lithographic resolution capabilities rather than by limitations in dielectric etch processes. The tunnel features increase a capacitance coupling ratio of the cell.

REFERENCES:
patent: 4460979 (1984-07-01), Brahmbhatt
patent: 4701776 (1987-10-01), Perlegos et al.
patent: 4868619 (1989-09-01), Mukherjee et al.
patent: 5077230 (1991-12-01), Woo et al.

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