Process for the manufacture of a junction field effect transisto

Fishing – trapping – and vermin destroying

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437 38, 437 39, 437174, 437175, 437944, 437911, 437984, 148DIG100, H01L 21338

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active

052739180

ABSTRACT:
The invention relates to a process for producing a junction field effect transistor in which the surface layer provided for conducting the current has a reduced cross-section in the channel area. The gist of the invention is that a photoresist mask is applied to the surface layer of the first conductivity type which is initially of uniform thickness. The surface layer is removed to a residual thickness through an opening in the photoresist mask. Impurities are then implanted into the surface layer through the same opening in the aforesaid mask to produce a zone of the second or opposite conductivity type. Finally, the aforementioned mask is used as a contacting mask for the manufacture of the gate electrode.

REFERENCES:
patent: 3764865 (1973-10-01), Napoli et al.
patent: 3938241 (1976-02-01), George et al.
patent: 4229232 (1980-10-01), Kirkpatrick
patent: 4248948 (1981-02-01), Matsuda
patent: 4331485 (1982-05-01), Gat
patent: 4364778 (1982-12-01), Leamy et al.
patent: 4402127 (1983-09-01), Pham et al.
patent: 4451843 (1984-05-01), Dahlberg
patent: 4476622 (1984-10-01), Cogan
patent: 4503600 (1985-03-01), Nii et al.
patent: 4566021 (1986-01-01), Yokoyama
Ashok, S., et al., Thin Solid Films, 126 (1985) 251-256.
Davies, D. E., IEEE Electron Device Letters, vol. EDL-6, No. 8, Aug. 1985, pp. 397-399.
Vescan, L., et al., J. Crystal Growth, 73(1985), 482-486.
Shannon, J. M., et al., Vacuum, vol. 34, Nos. 1-2, 1984, pp. 193-197.
Patent Abstracts of Japan, E-170, Apr. 12, 1983, vol. 7, No. 88, 58-14577.
Colclaser, R. A., Microelectronics: Processing & Device Design, John Wiley & Sons, 1980, TIC 7874.C63, pp. 154-155, 319-322.
Patent Abstracts of Japan, E-65, Jul. 15, 1981, vol. 5, No. 1, 56-48177.
J. B. Boos, "Fully Ion Implanted InP Junction FET's", IEEE Electron Device Letters, vol. EDL-3, No. 9, (Sep. 1982), pp. 256-258.

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