Method for manufacturing a conductivity modulation MOSFET

Details Method for manufacturing a conductivity modulation MOSFET Method for manufacturing a conductivity modulation MOSFET

1992-01-02

1993-12-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 437913, 437974, 148DIG12, 148DIG126, H01L 21265

Patent

active

052739171

ABSTRACT:
A conductivity modulation type MOSFET (IGBT) including an n-type high resistance layer, p-type base regions selectively formed in a first major surface of the high resistance layer, n-type source regions formed in the surface of each base region, a p.sup.+ well region formed in a central region of each of the base regions, a channel in the base region between one of the n-type source regions and the high resistance layer, a gate electrode formed above the channel, an emitter electrode formed in contact with the p.sup.+ well region and the n-type source region, a gate insulating film formed between the gate electrode and the channel, and a metal electrode formed in contact with a second major surface of the high resistance layer opposite the first major source, the electrode forming a Schottky barrier junction.

REFERENCES:
patent: 4672407 (1987-06-01), Nakagawa et al.
patent: 4908328 (1990-03-01), Hu et al.
patent: 4916085 (1990-04-01), Frisina
patent: 5068700 (1991-11-01), Yamaguchi et al.
patent: 5183769 (1993-02-01), Rutter et al.

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