Method of forming a SOI transistor having a self-aligned body co

Details Method of forming a SOI transistor having a self-aligned body co Method of forming a SOI transistor having a self-aligned body co

1994-06-29

1995-04-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 43, 437 89, 437 62, 148DIG150, H01L 21265

Patent

active

054057957

ABSTRACT:
An SOI transistor has a self-aligned body contact formed through an extension to the gate, thereby forming the body contact with minimal increase in area and also avoiding the need to tie the source to the body, as in prior art schemes that passed the body contact through the source. The body contact aperture is formed by raising the source and drain to define an initial aperture, depositing a conformal layer that is etched to create aperture-defining sidewalls and etching the contact aperture using these sidewalls to define sidewall support members that support insulating sidewalls to isolate the collection electrode from both the gate and from the source and drain.

REFERENCES:
patent: 4946799 (1990-08-01), Blake et al.
patent: 5059547 (1991-10-01), Shirai
patent: 5066613 (1991-11-01), Reedy et al.
patent: 5120666 (1992-06-01), Gotou
patent: 5188973 (1993-02-01), Omura et al.
patent: 5273921 (1993-12-01), Neudeck et al.
E. P. Ver Ploeg, et al., IEDM 1992, p. 33, "Elimination of Bipolar-Induced Breakdown in Fully-Depleted SOI MOSFETs".

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