Semiconductor light emitting device with terraced structure

Details Semiconductor light emitting device with terraced structure Semiconductor light emitting device with terraced structure

1992-07-21

1994-03-15

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 80, 257 85, 257 90, 372 48, 372 50, 372 97, H01L 3300, H01S 319

Patent

active

052948153

ABSTRACT:
A semiconductor light emitting device able to emit a high intensity, stable light. An edge surface lighting type light emitting diode array is formed on a substrate. A light emitting edge surface of each light emitting element is formed by an etching method. A surface of the substrate in front of the light emitting edge surface is formed in multiple stage so that a light beam is not reflected by the surface of the substrate.

REFERENCES:
patent: 4211586 (1980-07-01), Fang
patent: 4847846 (1989-07-01), Sone
patent: 5117477 (1992-05-01), Satoh

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