Process for fabricating improved bipolar transistor utilizing se

Details Process for fabricating improved bipolar transistor utilizing se Process for fabricating improved bipolar transistor utilizing se

1980-03-03

1982-01-12

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29579, 29587, 29590, 29591, 148 15, 148187, 156643, 156644, 156653, 204192EC, H01L 21265, H01L 21285, H01L 2131

Patent

active

043098126

ABSTRACT:
Disclosed is a self-aligned process for providing an improved bipolar transistor structure.
The process includes the chemically etching of an intermediate insulating layer to undercut another top layer of a different insulating material in a self-aligned emitter process wherein the spacing of the emitter contact to the polysilicon base contact is reduced to a magnitude of approximately 0.2 to 0.3 micrometers. In addition, in the process an emitter plug is formed to block the emitter region from the heavy P+ ion dose implant of the extrinsic base.

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