Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1995-11-13
1998-04-28
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257141, 257146, 257147, 257155, 257162, 257343, H01L 2974, H01L 2976
Patent
active
057448302
ABSTRACT:
A semiconductor device made of a lightly doped region of a first conductivity type has a well formed of a second conductivity type. The well extends to the surface of the device. First, second and third heavily doped regions of the first conductivity type are in the surface of the well. An electrode is fixed to the first heavily doped region of the first conductivity type. The third heavily doped region of the first conductivity type adjoins the lightly doped region of the first conductivity type. The first and second heavily doped regions of the first conductivity type are spaced apart from one another so that a portion of the well extends to the surface of the device therebetween. A first gate electrode is fixed via an insulating layer to a portion of the well extending between the first and second heavily doped regions. The first and third heavily doped regions of the first conductivity type are spaced apart from one another so that a portion of the well extends therebetween. A second gate electrode is fixed via an insulating layer to the portion of the well extending between the first and third heavily doped regions. Finally, a heavily doped region of the second conductivity type in the surface of the well is electrically connected to the second heavily doped region of the first conductivity type.
REFERENCES:
patent: 5548150 (1996-08-01), Omura et al.
Amaratunga Gehan Anil Joseph
Ekkanath-Madathil Sankaranarayanan
Huang Qin
Kumagai Naoki
Fuji Electric & Co., Ltd.
Loke Steven H.
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