Capacitive pressure sensor and method of fabricating same

Details Capacitive pressure sensor and method of fabricating same Capacitive pressure sensor and method of fabricating same

1997-01-08

1998-04-28

Chilcot, Richard

Measuring and testing

Fluid pressure gauge

Diaphragm

H01G 700

Patent

active

057447250

ABSTRACT:
A capacitive pressure sensor and method of fabricating the sensor includes providing a layered structure including a second silicon layer (115), a second insulating layer (203, 205) in contact with the second silicon layer (115), a first silicon layer (123) in contact with the second insulating layer (203, 205), a first insulating layer (201) in contact with the first silicon layer (123), and a mask layer (221) in contact with the first insulating layer (201). A major exposed surface (220) of the second silicon layer (115) is provided by mechanically reducing a thickness (210) of the second silicon layer (115) to a predetermined thickness (116). Preferably this is done by grinding and then polishing the second silicon layer (115). In one embodiment a third insulating layer (211) is in contact with the second major surface (220) of the second silicon layer (115). A third silicon layer (101) having a fourth insulating layer (109) forming a perimeter structure (215) positioned above and surrounding a predefined area (114) of the third silicon layer (101). The perimeter structure (215) is bonded to the third insulating layer (211), wherein a chamber (113) is formed between the third insulating layer (211), the perimeter structure (215), and the predefined area (114). Preferably, a portion of the first silicon layer (123) is removed using an anisotropic etch step.

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