Power semiconductor device

Details Power semiconductor device Power semiconductor device

1989-10-12

1991-08-13

Hille, Rolf

357 49, 357 50, 357 234, 357 38, H01L 2702

Patent

active

050400436

ABSTRACT:
A power semiconductor device includes a layered first insulating region (101) formed on a first major surface of a semiconductor layer (58), a first conductive layer (104, 105, 106, 107, 108, 109) formed on the first insulating region and having the same conductivity type as that of the semiconductor layer, a layered second insulating region (100) formed on the first conductive layer, a vertical power transistor (A) having the semiconductor layer as one of its components and formed on the first major surface of the semiconductor layer, a third insulating region (102) for dielectrically isolating the first conductive layer from the other conductive layer, and a control MIS transistor (B, C), formed on the second insulating region, for controlling the vertical power transistor. A predetermined bias is applied on the first conductive layer to prevent formation of a back channel of the control MIS transistor.

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patent: 4767722 (1988-08-01), Blanchard
Proceedings of 1988 International Symposium of Power Semiconductor Devices, 8/22-23/88, "Intelligent Power Technology-A Reality in the 1990s", pp. 88-95, by Cini et al.
International Electron Devices meeting 1987, Washington, D.C., Dec. 6-9, 1987, Design of High Side Driver in Multipower-BCD and Vipower Technologies, C. Contiero et al., SGS Microelettronica S.p.A., Monolothic Microsystem Division, 20010 Cornaredo, Milan, Italy.
International Electron Devices meeting 1982 San Francisco, Calif., Dec. 13-14-15, The Insulated Gate Rectifier (IGR): A New Power Switching Device, B. J. Baliga et al., General Electric Company Corporate Research and Development Center Schenectady, NY.
IEEE Transactions on Electron Devices, vol. ED-34, No. 4, Apr. 1987, An Ultra-Low On-Resistance Power MOSFET Fabricated by Using a Fully Self-Aligned Process, Daisuke Ueda et al.
Proceedings of the IEEE 1987 Custom Integrated Circuits Conference, The Portland Hilton, Portland, Oregon, Educational Sessions the Westin Benson, Dielectrically Isolated Intelligent Power Switch, Yu Ohata et al., Toshiba Semiconductor, Division 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki, Japan.
IEEE Electron Device Letters, vol. EDL-4, No. 12, Dec. 1983, Fast-Switching Insulated Gate Transistors, B. J. Baliga, Fellow, IEEE.

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