Phase shift mask, method of manufacturing a phase shift mask and

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430322, G03F 900

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active

057442681

ABSTRACT:
A surface of a transparent substrate is exposed at a first light transmission region Ta.sub.1, a semi-shield film is formed on the surface of the transparent substrate at a second light transmission region Ta.sub.2, a trench is formed at the surface of the transparent substrate at a third light transmission region Tn.sub.1, the semi-shield film and a phase shifter layer are layered on the surface of the transparent substrate at a fourth light transmission region Tn.sub.2, and the semi-shield film, the phase shifter layer and a shield film are layered on the surface of the transparent substrate at a shield region S. Thereby, hole patterns at a fine pitch can be precisely formed at a photoresist of a positive type by an exposure apparatus using a reduced number of a mask and having a simple structure.

REFERENCES:
patent: 5608775 (1997-03-01), Watanabe
patent: 5670281 (1997-09-01), Dai

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