Semiconductor device having stacking structure

Details Semiconductor device having stacking structure Semiconductor device having stacking structure

1987-03-05

1989-02-21

Edlow, Martin H.

357 68, 357 71, H01L 2316, H01L 2348, H01L 2946

Patent

active

048070211

ABSTRACT:
A semiconductor device includes a base semiconductor structure including semiconductor elements, interconnection layers for connecting the semiconductor elements together, and conductive pads to which the interconnection layers are connected, at least one stacking semiconductor structure including semiconductor elements, an interconnection layer for connecting the semiconductor elements together, and conductive pads to which the interconnection layers are connected, the stacking semiconductor structure having holes selectively formed therein to expose portions of the conductive pads, first conductive elements fixed in the holes of the stacking semiconductor structure, to be electrically connected to the exposed portions of the conductive pads, and second conductive elements fixed on the conductive pads of the base semiconductor structure, and fixed to the first conductive elements, with a gap provided between the base and stacking semiconductor structures.

REFERENCES:
patent: 4545610 (1985-10-01), Lakritz et al.
Nikkei Electronics, 1985, 10.7 3-Dimensional LSI, "Now Emerging" As High Integration/Multi-Function Device.

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