Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1980-04-17
1982-08-10
Roy, Upendra
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 148 15, 148187, 357 15, 357 67, 357 91, 427 84, C23F 102, B01J 1700, B05D 512, C23C 1108
Patent
active
043430821
ABSTRACT:
In the fabrication of a metal oxide semiconductor field effect transistor (MOSFET) or of a metal gate field effect transistor (MESFET), characterized by a polycrystalline silicon gate (13) and a short channel of about a micron or less, a sequence of steps is used involving the simultaneous formation of source, drain, and gate electrode contacts by a bombardment with a transition metal, such as platinum, which forms metal-silicide layers (19, 21, 18) on the source and drain regions (10.1, 10.2) as well as the silicon gate electrode (13).
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Lepselter Martin P.
Sze Simon M.
Bell Telephone Laboratories Incorporated
Caplan David I.
Roy Upendra
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