Heterojunction field-effect device

Details Heterojunction field-effect device Heterojunction field-effect device

1987-05-21

1989-02-21

James, Andrew J.

357 16, H01L 2980

Patent

active

048070017

ABSTRACT:
For high speed operation and improvement in transconductance, there is disclosed a heterojunction field-effect device comprising, a first layer of a first compound semiconductor material having a relatively high donor impurity concentration, a second layer of a second compound semiconductor material formed on the first layer and having a relatively low donor impurity concentration and a relatively large electron affinity, a third layer of high-purity compound semiconductor material formed on the second layer and having a relatively small electron affinity, a gate electrode formed on the third layer, a source electrode formed on one side of the gate electrode and electrically connected to the first and second layers, and a drain electrode formed on the other side of the gate electrode and electrically connected to the first and second layers, so that a carrier-accumulation layer takes place in the second layer of the relatively low donor impurity concentration due to the difference in electron affinity between the second and third layers.

REFERENCES:
patent: 4556895 (1985-12-01), Ohata
patent: 4605945 (1986-08-01), Katayama
patent: 4641161 (1987-02-01), Kim

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